New method for the production of thin and stable, segmented n$$+$$ contacts in HPGe detectors

Abstract The realization of pulsed-laser diffused, thin n $$+$$ + contacts on high purity germanium (HPGe) and their successful segmentation is described. have been obtained by a laser-induced diffusion Sb atoms, deposited sputtering Ge surface, then segmented means photolithographic technique. Three small prototypes gamma ray detectors implemented, using the same contact (laser diffused Sb) but with three different geometries B implanted p contact. Electrical detection properties characterized, showing low leakage currents good spectroscopy data gamma-ray sources. stability detector performance has also tested subjecting one to typical annealing treatment.